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High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

Received: 17 August 2014     Accepted: 6 September 2014     Published: 20 September 2014
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Abstract

The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.

Published in International Journal of Materials Science and Applications (Volume 3, Issue 5)
DOI 10.11648/j.ijmsa.20140305.18
Page(s) 177-182
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

AlGaN Diffusion, MOVPE, Al4C3, High Temperature

References
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Cite This Article
  • APA Style

    Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai. (2014). High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. International Journal of Materials Science and Applications, 3(5), 177-182. https://doi.org/10.11648/j.ijmsa.20140305.18

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    ACS Style

    Dohyung Kim; Heesub Lee; Yoshiki Naoi; Shiro Sakai. High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. Int. J. Mater. Sci. Appl. 2014, 3(5), 177-182. doi: 10.11648/j.ijmsa.20140305.18

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    AMA Style

    Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai. High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. Int J Mater Sci Appl. 2014;3(5):177-182. doi: 10.11648/j.ijmsa.20140305.18

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  • @article{10.11648/j.ijmsa.20140305.18,
      author = {Dohyung Kim and Heesub Lee and Yoshiki Naoi and Shiro Sakai},
      title = {High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3},
      journal = {International Journal of Materials Science and Applications},
      volume = {3},
      number = {5},
      pages = {177-182},
      doi = {10.11648/j.ijmsa.20140305.18},
      url = {https://doi.org/10.11648/j.ijmsa.20140305.18},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140305.18},
      abstract = {The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.},
     year = {2014}
    }
    

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  • TY  - JOUR
    T1  - High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3
    AU  - Dohyung Kim
    AU  - Heesub Lee
    AU  - Yoshiki Naoi
    AU  - Shiro Sakai
    Y1  - 2014/09/20
    PY  - 2014
    N1  - https://doi.org/10.11648/j.ijmsa.20140305.18
    DO  - 10.11648/j.ijmsa.20140305.18
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 177
    EP  - 182
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20140305.18
    AB  - The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.
    VL  - 3
    IS  - 5
    ER  - 

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Author Information
  • Graduate School of Advanced Technology and Science, Tokushima University, Tokushima, Japan

  • Epitaxy Research Team, Seoul Viosys corporation, Kyunggi-do, Republic of Korea

  • Institutes of Technology and Science, Tokushima University, Tokushima, Japan

  • Institutes of Technology and Science, Tokushima University, Tokushima, Japan

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